Invention Grant
- Patent Title: Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit
- Patent Title (中): 抛光装置和两步法抛光集成电路的金属层
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Application No.: US10544411Application Date: 2004-01-23
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Publication No.: US07709387B2Publication Date: 2010-05-04
- Inventor: Viet Nguyen Hoang , Roel Daamen
- Applicant: Viet Nguyen Hoang , Roel Daamen
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP03100284 20030211
- International Application: PCT/IB2004/050047 WO 20040123
- International Announcement: WO0004/073060 WO 20040826
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The method of manufacturing an integrated circuit (IC) according to the invention starts with providing a pre-fabricated integrated circuit (10) comprising an electrical device (2) and having a surface (11) coated with a dielectric material (12) and a metal (15). The dielectric material (12), which may be separated from the metal (15) by the barrier layer (14), has an opening (13), which is filled with the metal (15). Portions of the metal (15) outside the opening (13) are removed by polishing for a first period of time, after which an etching agent (25) is added to the polishing liquid (24) and polishing is continued for a second period of time for removing portions of the metal (15) remaining outside the opening (13). The polishing apparatus (40) is able to perform the method.
Public/Granted literature
- US20060134915A1 Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit Public/Granted day:2006-06-22
Information query
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