Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11611909Application Date: 2006-12-18
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Publication No.: US07709393B2Publication Date: 2010-05-04
- Inventor: In Su Kim
- Applicant: In Su Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Saliwanchik
- Priority: KR10-2005-0132296 20051228
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for manufacturing a semiconductor device is provided. In particular, a method for removing unwanted material layers from an edge and lower bevel region of a wafer is provided. The method includes performing a first etch of an edge region of a wafer having material layers formed thereon, coating the wafer with a photoresist layer, and patterning the photoresist layer to expose at least the edge and an upper bevel region of the wafer for etching the material layers remaining after performing the first etch.
Public/Granted literature
- US20070148913A1 Method for Manufacturing Semiconductor Device Public/Granted day:2007-06-28
Information query
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