Invention Grant
- Patent Title: Substrate processing method and apparatus fabrication process of a semiconductor device
- Patent Title (中): 半导体器件的衬底处理方法和器件制造工艺
-
Application No.: US11687738Application Date: 2007-03-19
-
Publication No.: US07709394B2Publication Date: 2010-05-04
- Inventor: Hidenori Miyoshi , Kenji Ishikawa , Yukio Takigawa , Yoshihiro Nakata , Hideki Tateishi
- Applicant: Hidenori Miyoshi , Kenji Ishikawa , Yukio Takigawa , Yoshihiro Nakata , Hideki Tateishi
- Applicant Address: JP Tokyo JP Kawasaki-shi JP Tokyo
- Assignee: Tokyo Electron Limited,Fujitsu Limited,Ebara Corporation
- Current Assignee: Tokyo Electron Limited,Fujitsu Limited,Ebara Corporation
- Current Assignee Address: JP Tokyo JP Kawasaki-shi JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-086569 20060327; JP2007-045748 20070226
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.
Public/Granted literature
- US20070224725A1 SUBSTRATE PROCESSING METHOD AND APPARATUS FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE Public/Granted day:2007-09-27
Information query
IPC分类:
