Invention Grant
- Patent Title: Semiconductor device fabrication method
- Patent Title (中): 半导体器件制造方法
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Application No.: US11411800Application Date: 2006-04-27
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Publication No.: US07709395B2Publication Date: 2010-05-04
- Inventor: Tomohiro Saito
- Applicant: Tomohiro Saito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-132093 20050428
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
According to an aspect of the invention, there is provided a semiconductor device fabrication method including forming a first mask on a semiconductor substrate, processing the first mask to form a first mask pattern of a fine portion, forming a second mask on the semiconductor substrate on which the first mask pattern is formed, forming a second mask pattern on a predetermined portion of the second mask, forming a third mask pattern by anisotropically etching the second mask by using the second mask pattern, removing the second mask pattern and the first mask pattern, and processing the semiconductor substrate by using the third mask pattern.
Public/Granted literature
- US20060246685A1 Semiconductor device fabrication method Public/Granted day:2006-11-02
Information query
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