Invention Grant
US07709399B2 Atomic layer deposition systems and methods including metal β-diketiminate compounds
有权
原子层沉积系统和方法，包括金属和二铬酸盐化合物
- Patent Title: Atomic layer deposition systems and methods including metal β-diketiminate compounds
- Patent Title (中): 原子层沉积系统和方法，包括金属和二铬酸盐化合物
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Application No.: US12181578Application Date: 2008-07-29
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Publication No.: US07709399B2Publication Date: 2010-05-04
- Inventor: Timothy A. Quick
- Applicant: Timothy A. Quick
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
Public/Granted literature
- US20080280455A1 ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS Public/Granted day:2008-11-13
Information query
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