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US07709401B2 Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature 失效
制造热可编程抗反向工程互连的方法,其中互连仅在室温以上被加热时才导通

Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature
Abstract:
An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.
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