Invention Grant
- Patent Title: Conductive layers for hafnium silicon oxynitride films
- Patent Title (中): 铪硅氧氮化物薄膜的导电层
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Application No.: US11355490Application Date: 2006-02-16
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Publication No.: US07709402B2Publication Date: 2010-05-04
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a HfSiON film on a substrate for use in a variety of electronic systems. The HfSiON film may be structured as one or more monolayers. The HfSiON film may be formed by atomic layer deposition. Electrodes to a dielectric containing a HfSiON may be structured as one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum. The titanium nitride and the tantalum may be formed by atomic layer deposition.
Public/Granted literature
- US20070187831A1 Conductive layers for hafnium silicon oxynitride films Public/Granted day:2007-08-16
Information query
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