Invention Grant
- Patent Title: Infrared sensor unit and process of fabricating the same
- Patent Title (中): 红外传感器单元及其制造工艺
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Application No.: US12063850Application Date: 2006-08-16
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Publication No.: US07709795B2Publication Date: 2010-05-04
- Inventor: Hiroshi Yamanaka , Tsutomu Ichihara , Yoshifumi Watabe , Koji Tsuji , Masao Kirihara , Takaaki Yoshihara , Yoichi Nishijima , Satoshi Hyodo
- Applicant: Hiroshi Yamanaka , Tsutomu Ichihara , Yoshifumi Watabe , Koji Tsuji , Masao Kirihara , Takaaki Yoshihara , Yoichi Nishijima , Satoshi Hyodo
- Applicant Address: JP Osaka
- Assignee: Panasonic Electric Works Co., Ltd.
- Current Assignee: Panasonic Electric Works Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Cheng Law Group, PLLC
- Priority: JP2005-236868 20050817
- International Application: PCT/JP2006/316444 WO 20060816
- International Announcement: WO2007/021030 WO 20070222
- Main IPC: G01J5/20
- IPC: G01J5/20

Abstract:
An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
Public/Granted literature
- US20090114819A1 INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME Public/Granted day:2009-05-07
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