A method of tuning an ion beam in an ion implanter relative to, e.g., ion beam current, energy, size and shape, includes retrieving a set of parameters associated with operation of the ion implanter, at least some of which are stored in a dynamic database, configuring the ion implanter according to the retrieved set of parameters, to thereby provide an ion beam, optimizing the ion beam by varying one or more of the parameters, and updating the parameters stored in the dynamic database which changed during optimization.