Invention Grant
- Patent Title: Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device
- Patent Title (中): 有机半导体结构及其制造方法以及有机半导体器件
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Application No.: US11092174Application Date: 2005-03-29
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Publication No.: US07709830B2Publication Date: 2010-05-04
- Inventor: Junichi Hanna , Hiroaki Iino , Hiroki Maeda
- Applicant: Junichi Hanna , Hiroaki Iino , Hiroki Maeda
- Applicant Address: JP Tokyo-to
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo-to
- Agency: Ladas & Parry LLP
- Priority: JP2004-108591 20040331
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
An organic semiconductor device Including an organic semiconductor layer in a crystallized crystal state is disclosed. The organic semiconductor layer is formed from an organic semiconductor material including a liquid crystal molecule. The semiconductor material has properties capable of exhibiting a supercooled state during a phase transition process, in which a phase having no periodic regularity is capable of being transferred into a phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules. The phase having no periodic regularity at a location of a center of gravity In between the liquid crystal molecules is a nematic liquid crystal phase and the phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules is a crystal phase.
Public/Granted literature
- US20060113526A1 Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device Public/Granted day:2006-06-01
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