Invention Grant
- Patent Title: Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge
- Patent Title (中): 检测器装置,用于检测电荷载流子的方法以及使用ONO场效应晶体管检测电荷
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Application No.: US10507787Application Date: 2003-03-12
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Publication No.: US07709836B2Publication Date: 2010-05-04
- Inventor: Bernhard Knott , Georg Tempel
- Applicant: Bernhard Knott , Georg Tempel
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Brinks Hofer Gilson & Lione
- Priority: DE10211359 20020314
- International Application: PCT/DE03/00788 WO 20030312
- International Announcement: WO03/079454 WO 20030925
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/66

Abstract:
The invention relates to a detector arrangement (100), a method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge. The detector arrangement (100) has an ONO field effect transistor embodied on and/or in a substrate (101), for the detection of electrical charge carriers, such that the electrical charge carrier (103) for detection may be introduced into die ONO field effect transistor layer sequence (102), a recording unit (104), coupled to the ONO field effect transistor, for recording an electrical signal characteristic of the amount and/or the charge carrier type for the electrical charge carrier (103) introduced into the ONO layer sequence (102) and an analytical unit for determining the amount and/or the charge carrier type of the electrical charge carrier (103) introduced into the ONO layer sequence (102) from the characteristic electrical signal.
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