Invention Grant
US07709845B2 Semiconductor light emitting device with improved current spreading structure
失效
具有改善的电流扩展结构的半导体发光器件
- Patent Title: Semiconductor light emitting device with improved current spreading structure
- Patent Title (中): 具有改善的电流扩展结构的半导体发光器件
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Application No.: US11588330Application Date: 2006-10-27
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Publication No.: US07709845B2Publication Date: 2010-05-04
- Inventor: Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
- Applicant: Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
- Applicant Address: KR Kyungki-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Kyungki-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2005-0106155 20051107
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.
Public/Granted literature
- US20070102715A1 Semiconductor light emitting device Public/Granted day:2007-05-10
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