Invention Grant
- Patent Title: Group III nitride semiconductor light emitting device
- Patent Title (中): III族氮化物半导体发光器件
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Application No.: US11600106Application Date: 2006-11-16
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Publication No.: US07709848B2Publication Date: 2010-05-04
- Inventor: Katsumi Sugiura
- Applicant: Katsumi Sugiura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-331722 20051116
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/32

Abstract:
A group III nitride semiconductor light emitting device according to the present invention includes an intermediate layer formed of AlxGa1-x-yInyN(0
Public/Granted literature
- US20070110112A1 Group III nitride semiconductor light emitting device Public/Granted day:2007-05-17
Information query
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