Invention Grant
- Patent Title: Light-emitting diode chip including a mirror layer and a light-generating active zone
- Patent Title (中): 发光二极管芯片，其包括镜层和发光活性区
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Application No.: US11578657Application Date: 2005-04-14
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Publication No.: US07709851B2Publication Date: 2010-05-04
- Inventor: Stefan Bader , Wolfgang Schmid
- Applicant: Stefan Bader , Wolfgang Schmid
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102004018484 20040414; DE102005016592 20050411
- International Application: PCT/DE2005/000677 WO 20050414
- International Announcement: WO2005/101531 WO 20051027
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L29/227 ; H01L33/00 ; H01L27/15 ; H01L29/267 ; H01L31/12 ; H01L29/16 ; H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L31/0203
Abstract:
A thin-film light-emitting diode chip, in which the distance between a mirror layer (4) and a light-generating active zone (3) is set in such a way that a radiation emitted by the active zone (3) interferes with a light reflected from the mirror layer (4), the internal quantum efficiency of the active zone (3) being influenced by this interference and the emission characteristic of the active zone (3) of at least one preferred direction thereby being obtained.
Public/Granted literature
- US20080142780A1 Light-Emitting Diode Chip Public/Granted day:2008-06-19
Information query
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