Invention Grant
- Patent Title: Nitride semiconductor light emitting device
- Patent Title (中): 氮化物半导体发光器件
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Application No.: US11206222Application Date: 2005-08-18
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Publication No.: US07709858B2Publication Date: 2010-05-04
- Inventor: Yuhzoh Tsuda , Takeshi Kamikawa
- Applicant: Yuhzoh Tsuda , Takeshi Kamikawa
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2004-239467 20040819
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00
Abstract:
A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where atoms that terminate the surface of the first region are different from atoms that terminate the surface of the aforementioned second region, and the dug out region includes the first region and the second region.
Public/Granted literature
- US20060038166A1 Nitride semiconductor light emitting device Public/Granted day:2006-02-23
Information query
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