High electron mobility transistor semiconductor device and fabrication method thereof

Invention Grant

US07709860B2 High electron mobility transistor semiconductor device and fabrication method thereof 有权

Title translation: 高电子迁移率晶体管半导体器件及其制造方法

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Patent Title: High electron mobility transistor semiconductor device and fabrication method thereof
Patent Title (中): 高电子迁移率晶体管半导体器件及其制造方法
Application No.: US12432113

Application Date: 2009-04-29
Publication No.: US07709860B2

Publication Date: 2010-05-04
Inventor: Linh Dang , Wayne Yoshida , Xiaobing Mei , Jennifer Wang , Po-Hsin Liu , Jane Lee , Weidong Liu , Michael Barsky , Richard Lai
Applicant: Linh Dang , Wayne Yoshida , Xiaobing Mei , Jennifer Wang , Po-Hsin Liu , Jane Lee , Weidong Liu , Michael Barsky , Richard Lai
Applicant Address: US CA Los Angeles
Assignee: Northrop Grumman Space & Mission Systems Corp.
Current Assignee: Northrop Grumman Space & Mission Systems Corp.
Current Assignee Address: US CA Los Angeles
Agency: Posz Law Group, PLC
Main IPC: H01L29/778
IPC: H01L29/778

High electron mobility transistor semiconductor device and fabrication method thereof

Abstract:

In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).

Abstract(Chinese):

在半导体衬底（100）上形成半导体器件的方法中，在半导体衬底上沉积光致抗蚀剂层（102）通过电子束光刻在光致抗蚀剂层（102）中形成窗口（106）在光致抗蚀剂层（102）和窗口（106）中沉积共形层（108）; 并且基本上所有的保形层（108）从光致抗蚀剂层（102）和窗口的底部部分选择性地移除，以在窗口（106）中形成电介质侧壁（110）。

Public/Granted literature

US20090206369A1 HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2009-08-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/778	.....带有二维载流子气沟道的，如HEMT