Invention Grant
- Patent Title: Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same
- Patent Title (中): 离子注入掩模及其制造方法，使用离子注入掩模的碳化硅半导体器件及其制造方法
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Application No.: US11496627Application Date: 2006-08-01
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Publication No.: US07709862B2Publication Date: 2010-05-04
- Inventor: Ken-ichi Nonaka , Hideki Hashimoto , Seiichi Yokoyama , Hiroaki Iwakuro , Koichi Nishikawa , Masaaki Shimizu , Yusuke Fukuda
- Applicant: Ken-ichi Nonaka , Hideki Hashimoto , Seiichi Yokoyama , Hiroaki Iwakuro , Koichi Nishikawa , Masaaki Shimizu , Yusuke Fukuda
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Honda Motor Co., Ltd.,Shindengen Electric Manufacturing Co., Ltd.
- Current Assignee: Honda Motor Co., Ltd.,Shindengen Electric Manufacturing Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2005-224353 20050802
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
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