Invention Grant
- Patent Title: Solid state imaging device
- Patent Title (中): 固态成像装置
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Application No.: US11243910Application Date: 2005-10-04
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Publication No.: US07709863B2Publication Date: 2010-05-04
- Inventor: Tetsuro Kumesawa
- Applicant: Tetsuro Kumesawa
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JPP2004-292873 20041005
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.
Public/Granted literature
- US20060022223A1 Solid state imaging device Public/Granted day:2006-02-02
Information query
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