Invention Grant
- Patent Title: Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
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Application No.: US12194797Application Date: 2008-08-20
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Publication No.: US07709867B2Publication Date: 2010-05-04
- Inventor: Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- Applicant: Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-218963 20070824
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
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