Invention Grant
- Patent Title: CMOS image sensor and method for manufacturing the same
- Patent Title (中): CMOS图像传感器及其制造方法
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Application No.: US12347028Application Date: 2008-12-31
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Publication No.: US07709871B2Publication Date: 2010-05-04
- Inventor: Joon Hwang
- Applicant: Joon Hwang
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Saliwanchik
- Priority: KR10-2005-0090265 20050928
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.
Public/Granted literature
- US20090101946A1 CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-04-23
Information query
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