Invention Grant
US07709874B2 Semiconductor device having a split gate structure with a recessed top face electrode
失效
具有具有凹入的顶面电极的分离栅极结构的半导体器件
- Patent Title: Semiconductor device having a split gate structure with a recessed top face electrode
- Patent Title (中): 具有具有凹入的顶面电极的分离栅极结构的半导体器件
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Application No.: US11649208Application Date: 2007-01-04
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Publication No.: US07709874B2Publication Date: 2010-05-04
- Inventor: Tsutomu Okazaki , Motoi Ashida , Hiroji Ozaki , Tsuyoshi Koga , Daisuke Okada
- Applicant: Tsutomu Okazaki , Motoi Ashida , Hiroji Ozaki , Tsuyoshi Koga , Daisuke Okada
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-000141 20060104
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.
Public/Granted literature
- US20070155153A1 Semiconductor device having electrode and manufacturing method thereof Public/Granted day:2007-07-05
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