Invention Grant
- Patent Title: Insulated gate semiconductor device
- Patent Title (中): 绝缘栅半导体器件
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Application No.: US12050749Application Date: 2008-03-18
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Publication No.: US07709890B2Publication Date: 2010-05-04
- Inventor: Mitsuhiro Yoshimura
- Applicant: Mitsuhiro Yoshimura
- Applicant Address: JP Osaka JP Gunma
- Assignee: SANYO Electric Co., Ltd.,SANYO Semiconductor Co., Ltd
- Current Assignee: SANYO Electric Co., Ltd.,SANYO Semiconductor Co., Ltd
- Current Assignee Address: JP Osaka JP Gunma
- Agency: Morrison & Foerster LLP
- Priority: JP2007-076848 20070323
- Main IPC: H01L29/78
- IPC: H01L29/78

Abstract:
An isolation region is provided around a sense part. The isolation region is provided to have a depth that suppresses spread of a region with an uneven current distribution, which occurs at a peripheral edge of the sense part. Thus, in the sense part, an influence of the region with the uneven current distribution can be suppressed. Since the current distribution can be set more even throughout the sense part, the on-resistance in the sense part can be set closer to its designed value. Thus, a current ratio corresponding to a cell ratio can be obtained as designed. Consequently, current detection accuracy is improved.
Public/Granted literature
- US20080230810A1 INSULATED GATE SEMICONDUCTOR DEVICE Public/Granted day:2008-09-25
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