Invention Grant
- Patent Title: Semiconductor device including a transistor with a gate electrode having a taper portion
- Patent Title (中): 半导体器件包括具有锥形部分的栅电极的晶体管
-
Application No.: US11611579Application Date: 2006-12-15
-
Publication No.: US07709894B2Publication Date: 2010-05-04
- Inventor: Masayuki Kajiwara , Ritsuko Nagao
- Applicant: Masayuki Kajiwara , Ritsuko Nagao
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-217315 20010717
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A method for manufacturing a semiconductor device having a circuit made up by a TFT (Thin Film Transistor) having GOLD (Gate-Drain Overlapped LDD) structure, which an LDD region overlaps which a portion of a gate electrode, wherein the formation of a concentration depth profile peak of hydrogen in a semiconductor film is avoided to thereby improve the electrical characteristics of the TFT. The use of the semiconductor film manufactured in this manner allows manufacturing of a semiconductor device with good electrical characteristics only by hydrogenating treatment even when the activation of impurity elements does not carried out.
Public/Granted literature
- US20070102704A1 Semiconductor Device and Manufacturing Method Public/Granted day:2007-05-10
Information query
IPC分类:
