A solid state imaging device comprises: a photoelectric converting portion; a charge transferring portion including a charge transfer electrode for transferring an electric charge generated in the photoelectric converting portion; and a shielding film formed through an insulating film containing nitrogen on the charge transferring portion, wherein the insulating film containing the nitrogen includes: a first insulating film that covers at least a part of an upper surface of the charge transfer electrode; and a second insulating film formed to reach the upper surface of the charge transfer electrode from the photoelectric converting portion, and the first and second insulating films include a discontinuing portion.