A metal-base transistor is suggested. The transistor comprises a first and a second electrode (2, 6) and base electrode (6) to control current flow between the first and second electrode. The first electrode (2) is made from a semiconduction material. The base electrode (3) is a metal layer deposited on top of the semiconducting material forming the first electrode. According the invention the second electrode is formed by a semiconducting nanowire (6) being in electrical contact with the base electrode (3).