Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11854583Application Date: 2007-09-13
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Publication No.: US07709937B2Publication Date: 2010-05-04
- Inventor: Tadatoshi Danno
- Applicant: Tadatoshi Danno
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2003-431915 20031226
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device which includes: a semiconductor chip with plural pads; a tab connected with the semiconductor chip; bus bars which are located outside of the semiconductor chip and connected with the tab; a sealing body which resin-seals the semiconductor chip; plural leads arranged in a line around the semiconductor chip; plural first wires which connect pads of the semiconductor chip and the leads; and plural second wires which connect specific pads of the semiconductor chip and the bus bars. Since the sealing body has a continuous portion which continues from a side surface of the semiconductor chip to its back surface to a side surface of the tab, the degree of adhesion among the semiconductor chip, the tab and the sealing body is increased. This prevents peeling between the tab and the sealing body during a high-temperature process and thus improves the quality of the semiconductor device (QFN).
Public/Granted literature
- US20080012118A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-01-17
Information query
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