Invention Grant
- Patent Title: Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structure
- Patent Title (中): 具有薄而粗铜迹线的铜顶互连结构和形成铜顶互连结构的方法
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Application No.: US12283852Application Date: 2008-09-15
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Publication No.: US07709956B2Publication Date: 2010-05-04
- Inventor: Abdalla Aly Naem , Reda Razouk
- Applicant: Abdalla Aly Naem , Reda Razouk
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/053 ; H01L23/12 ; H01L27/10 ; H01L29/74
Abstract:
A copper-topped interconnect structure allows the combination of high density design areas, which have low current requirements that can be met with tightly packed thin and narrow copper traces, and low density design areas, which have high current requirements that can be met with more widely spaced thick and wide copper traces, on the same chip.
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Information query
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