Invention Grant
- Patent Title: Substrate with a piezoelectric thin film
- Patent Title (中): 具有压电薄膜的基板
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Application No.: US12073237Application Date: 2008-03-03
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Publication No.: US07710003B2Publication Date: 2010-05-04
- Inventor: Kenji Shibata , Fumihito Oka
- Applicant: Kenji Shibata , Fumihito Oka
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group PLLC
- Priority: JP2007-267858 20071015
- Main IPC: H01L41/187
- IPC: H01L41/187

Abstract:
A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.
Public/Granted literature
- US20090096328A1 Substrate with a piezoelectric thin film Public/Granted day:2009-04-16
Information query
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