Invention Grant
- Patent Title: RFID device having nonvolatile ferroelectric capacitor
- Patent Title (中): 具有非易失性铁电电容器的RFID装置
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Application No.: US11320987Application Date: 2005-12-30
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Publication No.: US07710240B2Publication Date: 2010-05-04
- Inventor: Hee Bok Kang , Jin Hong Ahn
- Applicant: Hee Bok Kang , Jin Hong Ahn
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0045494 20050530
- Main IPC: H04Q5/22
- IPC: H04Q5/22 ; G08B13/14
Abstract:
A capacitor applied to a voltage multiplier and a modulator/demodulator of a RFID device is formed as a nonvolatile ferroelectric capacitor formed by the same process of a memory cell capacitor. The nonvolatile ferroelectric capacitor has a high dielectric constant to reduce the area of the capacitor.
Public/Granted literature
- US20060267766A1 RFID device having nonvolatile ferroelectric capacitor Public/Granted day:2006-11-30
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