Invention Grant
- Patent Title: Determining leakage in matrix-structured electronic devices
- Patent Title (中): 确定矩阵结构的电子设备中的泄漏
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Application No.: US11645971Application Date: 2006-12-26
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Publication No.: US07710365B2Publication Date: 2010-05-04
- Inventor: Franky So , Florian Pschenitzka , Egbert Hoefling
- Applicant: Franky So , Florian Pschenitzka , Egbert Hoefling
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Main IPC: G09G3/30
- IPC: G09G3/30

Abstract:
One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.
Public/Granted literature
- US20080088542A1 Determining leakage in matrix-structured electronic devices Public/Granted day:2008-04-17
Information query
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