Invention Grant
US07710475B2 Solid-state image pickup device, method for transferring charge in solid-state imaging device and method for manufacturing solid-state imaging device 失效
固体摄像装置,固态成像装置中的电荷传输方法及固体摄像装置的制造方法

  • Patent Title: Solid-state image pickup device, method for transferring charge in solid-state imaging device and method for manufacturing solid-state imaging device
  • Patent Title (中): 固体摄像装置,固态成像装置中的电荷传输方法及固体摄像装置的制造方法
  • Application No.: US10540765
    Application Date: 2003-12-12
  • Publication No.: US07710475B2
    Publication Date: 2010-05-04
  • Inventor: Koichi Matsumoto
  • Applicant: Koichi Matsumoto
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sonnenschein Nath & Rosenthal LLP
  • Priority: JP2002-373414 20021225
  • International Application: PCT/JP03/15941 WO 20031212
  • International Announcement: WO2004/059741 WO 20040715
  • Main IPC: H04N3/14
  • IPC: H04N3/14 H04N5/335 H04N9/04 H01L31/062 H01L31/113
Solid-state image pickup device, method for transferring charge in solid-state imaging device and method for manufacturing solid-state imaging device
Abstract:
A solid-state image pickup device including a layered structure which includes an electric-charge transfer section The photosensors include a first photosensor particularly sensitive to light of a first wavelength and a second photosensor particularly sensitive to light of a second wavelength shorter than the first wavelength. The first photosensor and the second photosensor are adjacently located but separated by a potential barrier section. A read gate located beneath the first photosensor and transports electric charge from the first photosensor to an electric-charge transfer section located beneath the second photosensor.
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