Invention Grant
US07710702B2 Primary side control module and method for protection of MOSFET against burnout 失效
一次侧控制模块和保护MOSFET免受烧坏的方法

  • Patent Title: Primary side control module and method for protection of MOSFET against burnout
  • Patent Title (中): 一次侧控制模块和保护MOSFET免受烧坏的方法
  • Application No.: US11803754
    Application Date: 2007-05-15
  • Publication No.: US07710702B2
    Publication Date: 2010-05-04
  • Inventor: Jo-Chien Kuo
  • Applicant: Jo-Chien Kuo
  • Applicant Address: US CA Pomona
  • Assignee: Global Power Technologies, Inc.
  • Current Assignee: Global Power Technologies, Inc.
  • Current Assignee Address: US CA Pomona
  • Agent Elliott N. Kramsky
  • Main IPC: H02H7/00
  • IPC: H02H7/00
Primary side control module and method for protection of MOSFET against burnout
Abstract:
A primary side control module for a switching power supply and a method for protecting a MOSFET that is controlled by a controller chip of the type that includes a timing network and switching drive output pins. The module includes the controller chip and the MOSFET. The controller chip provides a gating signal at the switching drive output pin to the MOSFET that may regulate the passage of current through the primary winding of a transformer of a switching power supply.A circuit branch provides communication between the throughput of the MOSFET and the timing network pin of the controller chip. A capacitor is provided within the circuit branch to differentiate the throughput and provide a signal characterized by downgoing spikes that result in protection of the MOSFET from burnout due to abnormalities associated with the internal operation of the controller chip.
Information query
Patent Agency Ranking
0/0