Invention Grant
US07710702B2 Primary side control module and method for protection of MOSFET against burnout
失效
一次侧控制模块和保护MOSFET免受烧坏的方法
- Patent Title: Primary side control module and method for protection of MOSFET against burnout
- Patent Title (中): 一次侧控制模块和保护MOSFET免受烧坏的方法
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Application No.: US11803754Application Date: 2007-05-15
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Publication No.: US07710702B2Publication Date: 2010-05-04
- Inventor: Jo-Chien Kuo
- Applicant: Jo-Chien Kuo
- Applicant Address: US CA Pomona
- Assignee: Global Power Technologies, Inc.
- Current Assignee: Global Power Technologies, Inc.
- Current Assignee Address: US CA Pomona
- Agent Elliott N. Kramsky
- Main IPC: H02H7/00
- IPC: H02H7/00

Abstract:
A primary side control module for a switching power supply and a method for protecting a MOSFET that is controlled by a controller chip of the type that includes a timing network and switching drive output pins. The module includes the controller chip and the MOSFET. The controller chip provides a gating signal at the switching drive output pin to the MOSFET that may regulate the passage of current through the primary winding of a transformer of a switching power supply.A circuit branch provides communication between the throughput of the MOSFET and the timing network pin of the controller chip. A capacitor is provided within the circuit branch to differentiate the throughput and provide a signal characterized by downgoing spikes that result in protection of the MOSFET from burnout due to abnormalities associated with the internal operation of the controller chip.
Public/Granted literature
- US20070268641A1 Primary side control module and method for protection of MOSFET against burnout Public/Granted day:2007-11-22
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