Invention Grant
- Patent Title: Semiconductor device using magnetic domain wall moving
- Patent Title (中): 半导体器件采用磁畴壁移动
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Application No.: US11655927Application Date: 2007-01-22
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Publication No.: US07710756B2Publication Date: 2010-05-04
- Inventor: Chee-kheng Lim , Yong-su Kim
- Applicant: Chee-kheng Lim , Yong-su Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0069495 20060725
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.
Public/Granted literature
- US20080025060A1 Semiconductor device using magnetic domain wall moving Public/Granted day:2008-01-31
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