A semiconductor memory device includes memory cells; word lines connected to gates of the cells; n bit lines connected to the memory cells; sense amplifiers connected to the bit lines; refresh cells provided to correspond to the word lines, respectively, and provided to correspond to k bit lines, where k is a natural number smaller than n, one of the refresh cells storing therein refresh data indicating whether to perform a refresh operation on k memory cells out of the plural memory cells connected to a corresponding word line out of the plural word lines and connected to the k bit lines, respectively; a refresh sense amplifier reading the refresh data; and a refresh selection part provided to correspond to the refresh sense amplifier, and selecting whether to perform the refresh operation on the k memory cells according to the refresh data read by the refresh sense amplifier.