Invention Grant
- Patent Title: Semiconductor memory device having low jitter source synchronous interface and clocking method thereof
- Patent Title (中): 具有低抖动源同步接口的半导体存储器件及其时钟方法
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Application No.: US11950279Application Date: 2007-12-04
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Publication No.: US07710818B2Publication Date: 2010-05-04
- Inventor: Seung-Jun Bae
- Applicant: Seung-Jun Bae
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2006-0122585 20061205
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Provided are a semiconductor memory device having a source synchronous interface capable of reducing jitter while minimizing overhead and a clocking method thereof. The semiconductor memory device comprises a phase locked loop (PLL) circuit receiving a first external clock signal for a command and address signal and generating a first internal clock signal, a first delay locked loop (DLL) circuit receiving a second external clock signal for predetermined bits of data and the first internal clock signal and generating a second internal clock signal locked to the second external clock signal, and a second DLL circuit receiving a third external clock signal for the remaining bits of the data and the first internal clock signal and generating a third internal clock signal locked to the third external clock signal.
Public/Granted literature
- US20080130397A1 SEMICONDUCTOR MEMORY DEVICE HAVING LOW JITTER SOURCE SYNCHRONOUS INTERFACE AND CLOCKING METHOD THEREOF Public/Granted day:2008-06-05
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