Invention Grant
US07710818B2 Semiconductor memory device having low jitter source synchronous interface and clocking method thereof 有权
具有低抖动源同步接口的半导体存储器件及其时钟方法

  • Patent Title: Semiconductor memory device having low jitter source synchronous interface and clocking method thereof
  • Patent Title (中): 具有低抖动源同步接口的半导体存储器件及其时钟方法
  • Application No.: US11950279
    Application Date: 2007-12-04
  • Publication No.: US07710818B2
    Publication Date: 2010-05-04
  • Inventor: Seung-Jun Bae
  • Applicant: Seung-Jun Bae
  • Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
  • Agency: Muir Patent Consulting, PLLC
  • Priority: KR10-2006-0122585 20061205
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Semiconductor memory device having low jitter source synchronous interface and clocking method thereof
Abstract:
Provided are a semiconductor memory device having a source synchronous interface capable of reducing jitter while minimizing overhead and a clocking method thereof. The semiconductor memory device comprises a phase locked loop (PLL) circuit receiving a first external clock signal for a command and address signal and generating a first internal clock signal, a first delay locked loop (DLL) circuit receiving a second external clock signal for predetermined bits of data and the first internal clock signal and generating a second internal clock signal locked to the second external clock signal, and a second DLL circuit receiving a third external clock signal for the remaining bits of the data and the first internal clock signal and generating a third internal clock signal locked to the third external clock signal.
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