Invention Grant
- Patent Title: Copper oxide thin film low-friction material and film-forming method therefor
- Patent Title (中): 氧化铜薄膜低摩擦材料及其成膜方法
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Application No.: US10554204Application Date: 2004-04-23
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Publication No.: US07713635B2Publication Date: 2010-05-11
- Inventor: Masahiro Goto , Akira Kasahara , Masahiro Tosa , Kazuhiro Yoshihara
- Applicant: Masahiro Goto , Akira Kasahara , Masahiro Tosa , Kazuhiro Yoshihara
- Applicant Address: JP Tsukuba-shi
- Assignee: National Institute for Materials Science
- Current Assignee: National Institute for Materials Science
- Current Assignee Address: JP Tsukuba-shi
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2003-120461 20030424
- International Application: PCT/JP2004/005902 WO 20040423
- International Announcement: WO2004/094687 WO 20041104
- Main IPC: B32B9/00
- IPC: B32B9/00 ; H05H1/24
Abstract:
A copper oxide thin film mainly containing CuO is formed by a plasma film-forming process on a substrate for film formation. The friction coefficient of the copper oxide thin film can be controlled remarkably low.
Public/Granted literature
- US20080113219A1 Copper Oxide Thin Film Low-Friction Material And Film-Forming Method Therefor Public/Granted day:2008-05-15
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