Invention Grant
- Patent Title: Epitaxial layer structures, precursors for topotactic anion exchange films
- Patent Title (中): 外延层结构,拓扑阴离子交换膜的前体
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Application No.: US11425406Application Date: 2006-06-21
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Publication No.: US07713640B2Publication Date: 2010-05-11
- Inventor: Mark A. Zurbuchen
- Applicant: Mark A. Zurbuchen
- Agency: Ryndak & Suri LLP
- Main IPC: B32B9/04
- IPC: B32B9/04

Abstract:
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
Public/Granted literature
- US20060234066A1 TOPOTACTIC ANION EXCHANGE OXIDE FILMS AND METHOD OF PRODUCING THE SAME Public/Granted day:2006-10-19
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