Invention Grant
US07713640B2 Epitaxial layer structures, precursors for topotactic anion exchange films 有权
外延层结构,拓扑阴离子交换膜的前体

  • Patent Title: Epitaxial layer structures, precursors for topotactic anion exchange films
  • Patent Title (中): 外延层结构,拓扑阴离子交换膜的前体
  • Application No.: US11425406
    Application Date: 2006-06-21
  • Publication No.: US07713640B2
    Publication Date: 2010-05-11
  • Inventor: Mark A. Zurbuchen
  • Applicant: Mark A. Zurbuchen
  • Agency: Ryndak & Suri LLP
  • Main IPC: B32B9/04
  • IPC: B32B9/04
Epitaxial layer structures, precursors for topotactic anion exchange films
Abstract:
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
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