Invention Grant
US07713802B2 Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor
有权
应变InAlAs / InGaAs变质高电子迁移率晶体管的硫化处理方法
- Patent Title: Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor
- Patent Title (中): 应变InAlAs / InGaAs变质高电子迁移率晶体管的硫化处理方法
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Application No.: US11716826Application Date: 2007-03-12
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Publication No.: US07713802B2Publication Date: 2010-05-11
- Inventor: Hsien-Chin Chiu , Liann-Be Chang , Yuan-Chang Huang , Chung-Wen Chen , Wei-Hsien Lee
- Applicant: Hsien-Chin Chiu , Liann-Be Chang , Yuan-Chang Huang , Chung-Wen Chen , Wei-Hsien Lee
- Applicant Address: TW Tao-Yuan
- Assignee: Chang Gung University
- Current Assignee: Chang Gung University
- Current Assignee Address: TW Tao-Yuan
- Agency: Nikolai & Mersereau, P.A.
- Agent C. G. Mersereau
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.
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