Invention Grant
- Patent Title: Double patterning method
- Patent Title (中): 双重图案化方法
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Application No.: US12216107Application Date: 2008-06-30
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Publication No.: US07713818B2Publication Date: 2010-05-11
- Inventor: Michael Chan
- Applicant: Michael Chan
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D, LLC
- Current Assignee: SanDisk 3D, LLC
- Current Assignee Address: US CA Milpitas
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, and etching the underlying layer using both the first and the second photoresist patterns as a mask.
Public/Granted literature
- US20090258501A1 Double patterning method Public/Granted day:2009-10-15
Information query
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