Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Invention Grant

US07713829B2 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology 失效

Title translation: 在硅/硅锗外延层中引入碳以提高Si-Ge双极技术的产量

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Patent Title: Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
Patent Title (中): 在硅/硅锗外延层中引入碳以提高Si-Ge双极技术的产量
Application No.: US11562735

Application Date: 2006-11-22
Publication No.: US07713829B2

Publication Date: 2010-05-11
Inventor: Jack Oon Chu , Douglas Duane Coolbaugh , James Stuart Dunn , David R. Greenberg , David L. Harame , Basanth Jagannathan , Robb Allen Johnson , Louis D. Lanzerotti , Kathryn Turner Schonenberg , Ryan Wayne Wuthrich
Applicant: Jack Oon Chu , Douglas Duane Coolbaugh , James Stuart Dunn , David R. Greenberg , David L. Harame , Basanth Jagannathan , Robb Allen Johnson , Louis D. Lanzerotti , Kathryn Turner Schonenberg , Ryan Wayne Wuthrich
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Scully, Scott, Murphy & Presser, P.C.
Agent Richard M. Kotulak, Esq.
Main IPC: H01L21/8222
IPC: H01L21/8222 ; H01L29/737

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Abstract:

A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

Abstract(Chinese):

提供了在发射极和集电极区域之间基本上不存在位错缺陷的SiGe双极晶体管及其形成方法。 SiGe双极晶体管包括第一导电类型的集电极区域; 形成在所述集电区域的一部分上的SiGe基区; 以及形成在所述基极区域的一部分上的所述第一导电类型的发射极区域，其中所述集电极区域和所述基极区域在其中连续地包括碳。 SiGe基区进一步掺硼。

Public/Granted literature

US20080124881A1 INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY Public/Granted day:2008-05-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222	......双极工艺