Invention Grant
- Patent Title: Method for producing bonded wafer
- Patent Title (中): 接合晶片的制造方法
-
Application No.: US12286344Application Date: 2008-09-29
-
Publication No.: US07713842B2Publication Date: 2010-05-11
- Inventor: Hideki Nishihata , Isoroku Ono , Akihiko Endo
- Applicant: Hideki Nishihata , Isoroku Ono , Akihiko Endo
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-265133 20071011; JP2008-226648 20080904
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
In a method for producing a bonded wafer by bonding a wafer for active layer to wafer for support layer and then thinning the wafer for active layer, a terrace grinding for forming a terrace portion is carried out prior to a step of exposing the oxygen ion implanted layer to thereby leave an oxide film on a terrace portion of the wafer for support layer.
Public/Granted literature
- US20090098707A1 Method for producing bonded wafer Public/Granted day:2009-04-16
Information query
IPC分类:
