Invention Grant
US07713848B2 Method for re-crystallization of layer structures by means of zone melting, a device for this purpose and use thereof
失效
通过区域熔化重新结晶层结构的方法，用于该目的的装置及其用途
- Patent Title: Method for re-crystallization of layer structures by means of zone melting, a device for this purpose and use thereof
- Patent Title (中): 通过区域熔化重新结晶层结构的方法，用于该目的的装置及其用途
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Application No.: US12065742Application Date: 2006-09-04
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Publication No.: US07713848B2Publication Date: 2010-05-11
- Inventor: Stefan Reber , Achim Eyer , Fridolin Haas
- Applicant: Stefan Reber , Achim Eyer , Fridolin Haas
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- Current Assignee Address: DE Munich
- Agency: Gibson & Dernier LLP
- Agent Matthew B. Dernier, Esq.
- Priority: DE102005043303 20050912
- International Application: PCT/EP2006/008611 WO 20060904
- International Announcement: WO2007/031209 WO 20070322
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers.
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