Preventing damage to metal using clustered processing and at least partially sacrificial encapsulation

Invention Grant

US07713865B2 Preventing damage to metal using clustered processing and at least partially sacrificial encapsulation 有权

Title translation: 使用聚类处理和至少部分牺牲封装防止金属损坏

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Patent Title: Preventing damage to metal using clustered processing and at least partially sacrificial encapsulation
Patent Title (中): 使用聚类处理和至少部分牺牲封装防止金属损坏
Application No.: US11160465

Application Date: 2005-06-24
Publication No.: US07713865B2

Publication Date: 2010-05-11
Inventor: Jeffrey P. Gambino , Anthony K. Stamper
Applicant: Jeffrey P. Gambino , Anthony K. Stamper
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Hoffman Warnick LLC
Agent Richard Kotulak
Main IPC: H01L21/4763
IPC: H01L21/4763

Preventing damage to metal using clustered processing and at least partially sacrificial encapsulation

Abstract:

Methods are disclosed for metal encapsulation for preventing exposure of metal during semiconductor processing. In one embodiment, the method includes forming an opening in a structure exposing a metal surface in a bottom of the opening, where the opening forming step occurs in a tool including at least one clustered chamber. An at least partially sacrificial encapsulation layer is then formed on the exposed metal surface in the tool to prevent reaction of the exposed metal surface with the ambient. Exposure of the metal is thereby prevented.

Abstract(Chinese):

公开了用于在半导体加工期间防止金属暴露的金属封装的方法。在一个实施例中，该方法包括在露出开口底部的金属表面的结构中形成开口，其中开口形成步骤发生在包括至少一个聚集室的工具中。然后在工具中的暴露的金属表面上形成至少部分牺牲的封装层，以防止暴露的金属表面与环境的反应。从而防止了金属的暴露。

Public/Granted literature

US20060292863A1 PREVENTING DAMAGE TO METAL USING CLUSTERED PROCESSING AND AT LEAST PARTIALLY SACRIFICIAL ENCAPSULATION Public/Granted day:2006-12-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）