Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
-
Application No.: US12334475Application Date: 2008-12-14
-
Publication No.: US07714264B2Publication Date: 2010-05-11
- Inventor: Toshio Mochizuki , Takanobu Ambo
- Applicant: Toshio Mochizuki , Takanobu Ambo
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-070310 20060315
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively. There is provided a differential amplifier circuit in which a bias voltage is supplied to a noninverting input terminal thereof and an inverting input terminal thereof is connected to an analog current output node which is the drains connected together of one sides of the first differential MOSFETs, and a resistive element is provided between the inverting input terminal and an output terminal thereof. A converted analog output voltage is generated at the output terminal, and a voltage equal to the bias voltage is supplied to drains of the other sides of the first differential MOSFETs.
Public/Granted literature
- US20090095884A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2009-04-16
Information query
IPC分类: