Invention Grant
US07714311B2 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
有权
存储器件，存储器电路和具有可变电阻的半导体集成电路
- Patent Title: Memory device, memory circuit and semiconductor integrated circuit having variable resistance
- Patent Title (中): 存储器件，存储器电路和具有可变电阻的半导体集成电路
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Application No.: US12266818Application Date: 2008-11-07
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Publication No.: US07714311B2Publication Date: 2010-05-11
- Inventor: Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
- Applicant: Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-435269 20031226; JP2004-131542 20040427; JP2004-167223 20040604
- Main IPC: H01L27/105
- IPC: H01L27/105
Abstract:
A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.
Public/Granted literature
- US20090079009A1 MEMORY DEVICE, MEMORY CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VARIABLE RESISTANCE Public/Granted day:2009-03-26
Information query
IPC分类:
