Invention Grant
- Patent Title: Phase change memory cell with high read margin at low power operation
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Application No.: US11737838Application Date: 2007-04-20
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Publication No.: US07714312B2Publication Date: 2010-05-11
- Inventor: Thomas Happ
- Applicant: Thomas Happ
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material into the isolation material.
Public/Granted literature
- US20070187664A1 PHASE CHANGE MEMORY CELL WITH HIGH READ MARGIN AT LOW POWER OPERATION Public/Granted day:2007-08-16
Information query
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