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Invention Grant
US07714334B2 Polarless surface mounting light emitting diode 有权
无极表面安装发光二极管

  • Patent Title: Polarless surface mounting light emitting diode
  • Patent Title (中): 无极表面安装发光二极管
  • Application No.: US11839548
    Application Date: 2007-08-16
  • Publication No.: US07714334B2
    Publication Date: 2010-05-11
  • Inventor: Peter P. W. Lin
  • Applicant: Peter P. W. Lin
  • Agent Winston Hsu
  • Main IPC: H01L29/267
  • IPC: H01L29/267
Polarless surface mounting light emitting diode
Abstract:
A polarless surface mounting light emitting diode comprises a substrate; an upper surface of the substrate being etched with four independent metal thin film blocks; a lower surface of the substrate being formed with two independent metal thin film blocks; two ends of the substrate being formed with electroplated through holes; a plurality of metal thin films adhered upon the upper and lower surfaces of the substrate; two light emitting assemblies, each light emitting assembly being formed by a chip resistor and a chip light emitting diode; and a package layer. The connection of the polarless surface mounting light emitting diode of the present invention is not limited by the polarity. Any end of the polarless surface mounting light emitting diode can be connected to positive electrode or negative electrode.
Abstract(Chinese):

无极表面安装发光二极管包括基板; 用四个独立的金属薄膜块蚀刻衬底的上表面; 基板的下表面形成有两个独立的金属薄膜块; 基板的两端形成有电镀通孔; 多个金属薄膜粘附在基板的上表面和下表面上; 两个发光组件，每个发光组件由芯片电阻器和芯片发光二极管形成; 和封装层。 本发明的无极表面安装发光二极管的连接不受极性限制。 无极表面安装发光二极管的任何一端可以连接到正极或负极。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/26 ...除掺杂材料或其他杂质外，包括有包含在H01L29/16，H01L29/18，H01L29/20，H01L29/22，H01L29/24各组中两组或更多个组内的元素的
H01L29/267 ....在不同半导体区域中的
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