A solid-state imaging device includes a semiconductor substrate, a first pixel with a green color filter, a second pixel with a blue color filter and a third pixel with a red color filter. The first pixel includes a first area for generating an electric signal by photoelectric conversion, disposed in a first trench that is formed on a surface of the semiconductor substrate, and a first transistor area that outputs the electric signal obtained from the first area. The second pixel includes a second area formed in a flat shape on the surface of the semiconductor substrate, and a second transistor area that outputs the electric signal obtained from the second area. The third pixel includes a third area formed in a flat shape on the surface of the semiconductor substrate, and a third transistor area that outputs the electric signal obtained from the third area.