Invention Grant
US07714405B2 Layered CU-based electrode for high-dielectric constant oxide thin film-based devices
有权
用于高介电常数氧化物薄膜的器件的分层的基于CU的电极
- Patent Title: Layered CU-based electrode for high-dielectric constant oxide thin film-based devices
- Patent Title (中): 用于高介电常数氧化物薄膜的器件的分层的基于CU的电极
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Application No.: US11073263Application Date: 2005-03-03
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Publication No.: US07714405B2Publication Date: 2010-05-11
- Inventor: Orlando Auciello
- Applicant: Orlando Auciello
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Olson & Cepuritis, Ltd.
- Main IPC: H01L39/14
- IPC: H01L39/14
Abstract:
A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.
Public/Granted literature
- US20060199740A1 Layered CU-based electrode for high-dielectric constant oxide thin film-based devices Public/Granted day:2006-09-07
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