Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11905652Application Date: 2007-10-03
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Publication No.: US07714408B2Publication Date: 2010-05-11
- Inventor: Hajime Tokunaga
- Applicant: Hajime Tokunaga
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-273394 20061004
- Main IPC: H01L29/786
- IPC: H01L29/786

Abstract:
An object is to provide a semiconductor device mounted with memory which can be driven in the ranges of a current value and a voltage value which can be generated from a wireless signal. Another object is to provide write-once read-many memory to which data can be written anytime after manufacture of a semiconductor device. An antenna, antifuse-type ROM, and a driver circuit are formed over an insulating substrate. Of a pair of electrodes included in the antifuse-type ROM, the other of the pair of the electrodes is also formed through the same step and of the same material as a source electrode and a drain electrode of a transistor included in the driver circuit.
Public/Granted literature
- US20080083954A1 Semiconductor device and manufacturing method thereof Public/Granted day:2008-04-10
Information query
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